The MOCVD Challenge A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications
Material type:
TextOriginal language: English Series: Electronic materials and devices seriesPublication details: Boca Raton CRC Press 2011Edition: 2Description: xx, 779 pISBN: - 9781138114937 (PB)
- 621.381 RAZ
| Item type | Current library | Collection | Call number | Status | Date due | Barcode |
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Books
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IIITDM Kurnool | Non-fiction | 621.381 RAZ (Browse shelf(Opens below)) | Available | 0005337 |
Introduction to Semiconductor Compounds. Growth Technology. In situ Characterization during MOCVD. Ex situ Characterization Techniques. MOCVD Growth of GaAs Layers. Growth and Characterization of the GaInP–GaAs System. Optical Devices. GaAs-Based Lasers. GaAs-Based Heterojunction Electron Devices Grown by MOCVD. Optoelectronic Integrated Circuits (OEICs). InP–InP System: MOCVD Growth, Characterization and Applications. GaInAs–InP System: MOCVD Growth, Characterization and Applications. GaInAsP–InP System: MOCVD Growth, Characterization, and Applications. MOCVD Growth, Characterization and Applications of III–V Semiconductor Strained Heterostructures. MOCVD Growth of III–V Heterojunctions and Superlattices on Silicon Substrates and their Applications. Optoelectronic Devices Based on Quantum Structures. Appendices. Index.
MOCVD is a widely used technique in research and industry. This book provides coverage of the MOCVD challenge. It presents a review of methods for producing ultra thin, accurately controlled epitaxial layers of semiconductor multilayers and microstructures deposited over a large range of substrates.
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