The MOCVD Challenge (Record no. 2081)
[ view plain ]
| 000 -LEADER | |
|---|---|
| fixed length control field | 01844nam a22002297a 4500 |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20240219121143.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 240219b |||||||| |||| 00| 0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| International Standard Book Number | 9781138114937 (PB) |
| 041 ## - LANGUAGE CODE | |
| Language code of original | eng |
| 082 ## - DEWEY DECIMAL CLASSIFICATION NUMBER | |
| Classification number | 621.381 |
| Item number | RAZ |
| 100 ## - MAIN ENTRY--PERSONAL NAME | |
| Personal name | Razeghi,Manijeh |
| 245 ## - TITLE STATEMENT | |
| Title | The MOCVD Challenge |
| Remainder of title | A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications |
| 250 ## - EDITION STATEMENT | |
| Edition statement | 2 |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. | |
| Place of publication, distribution, etc. | Boca Raton |
| Name of publisher, distributor, etc. | CRC Press |
| Date of publication, distribution, etc. | 2011 |
| 300 ## - PHYSICAL DESCRIPTION | |
| Page number | xx, 779 p |
| 440 ## - SERIES STATEMENT/ADDED ENTRY--TITLE | |
| Title | Electronic materials and devices series |
| 505 ## - FORMATTED CONTENTS NOTE | |
| Formatted contents note | Introduction to Semiconductor Compounds. Growth Technology. In situ Characterization during MOCVD. Ex situ Characterization Techniques. MOCVD Growth of GaAs Layers. Growth and Characterization of the GaInP–GaAs System. Optical Devices. GaAs-Based Lasers. GaAs-Based Heterojunction Electron Devices Grown by MOCVD. Optoelectronic Integrated Circuits (OEICs). InP–InP System: MOCVD Growth, Characterization and Applications. GaInAs–InP System: MOCVD Growth, Characterization and Applications. GaInAsP–InP System: MOCVD Growth, Characterization, and Applications. MOCVD Growth, Characterization and Applications of III–V Semiconductor Strained Heterostructures. MOCVD Growth of III–V Heterojunctions and Superlattices on Silicon Substrates and their Applications. Optoelectronic Devices Based on Quantum Structures. Appendices. Index. |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc. | MOCVD is a widely used technique in research and industry. This book provides coverage of the MOCVD challenge. It presents a review of methods for producing ultra thin, accurately controlled epitaxial layers of semiconductor multilayers and microstructures deposited over a large range of substrates. |
| 650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | Electronic apparatus and appliances Materials |
| 650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | Metal organic chemical vapor deposition |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Source of classification or shelving scheme | Dewey Decimal Classification |
| Koha item type | Books |
| 952 ## - LOCATION AND ITEM INFORMATION (KOHA) | |
| -- | 6151 |
| Withdrawn status | Lost status | Source of classification or shelving scheme | Damaged status | Not for loan | Collection code | Home library | Current library | Date acquired | Source of acquisition | Cost, normal purchase price | Inventory number | Total Checkouts | Full call number | Barcode | Date last seen | Cost, replacement price | Price effective from | Currency | Koha item type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Dewey Decimal Classification | Non-fiction | IIITDM Kurnool | IIITDM Kurnool | 19.02.2024 | Narendra Publishing House | 4793.20 | NPH/23-24/IN-00392 DATED 26.12.2 | 621.381 RAZ | 0005337 | 19.02.2024 | 4893.20 | 19.02.2024 | INR | Books |