000			01844nam a22002297a 4500
005			20240219121143.0
008			240219b |||||||| |||| 00| 0 eng d
020			_a9781138114937 (PB)
041			_heng
082			_a621.381 _bRAZ
100			_aRazeghi,Manijeh
245			_aThe MOCVD Challenge _b A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications
250			_a2
260			_aBoca Raton _bCRC Press _c2011
300			_axx, 779 p
440			_a Electronic materials and devices series
505			_aIntroduction to Semiconductor Compounds. Growth Technology. In situ Characterization during MOCVD. Ex situ Characterization Techniques. MOCVD Growth of GaAs Layers. Growth and Characterization of the GaInP–GaAs System. Optical Devices. GaAs-Based Lasers. GaAs-Based Heterojunction Electron Devices Grown by MOCVD. Optoelectronic Integrated Circuits (OEICs). InP–InP System: MOCVD Growth, Characterization and Applications. GaInAs–InP System: MOCVD Growth, Characterization and Applications. GaInAsP–InP System: MOCVD Growth, Characterization, and Applications. MOCVD Growth, Characterization and Applications of III–V Semiconductor Strained Heterostructures. MOCVD Growth of III–V Heterojunctions and Superlattices on Silicon Substrates and their Applications. Optoelectronic Devices Based on Quantum Structures. Appendices. Index.
520			_aMOCVD is a widely used technique in research and industry. This book provides coverage of the MOCVD challenge. It presents a review of methods for producing ultra thin, accurately controlled epitaxial layers of semiconductor multilayers and microstructures deposited over a large range of substrates.
650			_aElectronic apparatus and appliances Materials
650			_aMetal organic chemical vapor deposition
942			_2ddc _cBK
999			_c2081 _d2081