TY  - BOOK
AU  - Wang, Kaiyou [ed.]
AU  - Wang,Kaiyou
AU  - Yang,Meiyin
AU  - Luo,Jun
AU  - 
AU  - 
AU  - 
ED  - John Wiley & Sons,
TI  - Spintronics: materials, devices and applications 
T2  - Wiley series in materials for electronic and optoelectronic applications
SN  - 9781119698975
U1  - 621.3 23/eng/20220511
PY  - 2022///
CY  - Hoboken, NJ
PB  - John Wiley & Sons
KW  - Spintronics
N1  - Includes bibliographical references and index; Giant Magnetoresistance (GMR) Materials and Devices for Biomedical and Industrial Applications; Tunneling Magnetoresistance (TMR) Materials and Devices for Magnetic Sensors; Spin-Transfer Torque Materials and Devices for Magnetic Random-Access Memory (STT-MRAM); Spin-Orbit Torque (SOT) Materials and Devices; Spin Oscillators; Magnetic Tunnel Junctions for Artificial Neural Network; Three-Dimensional Magnetic Structures of B20 Chiral Magnets; Multiferroelectric Materials; Robust Manipulation of Magnetic Properties in (Ga,Mn)As; Antiferromagnetic Materials and Their Manipulations; Prospects
N2  - "A brief introduction of theoretical and experimental research activities of spintronics materials, devices and applications recently. Giant Magnetoresistance (GMR) sensors are promising candidates for biomedical and environmental application such as detecting virus, cancer cells or heavy metal atoms. This detecting method is simple and convenient for individuals to diagnose health issues. The chapter will explain why the GMR materials and devices are useful in these specific applications and also involve the post 2016 developments for GMR sensors. TMR has much larger value of magneto-resistance than GMR, which provides higher resolution for detecting magnetic field. Now it is used in magnetic read head, earth magnetic sensors or other magnetic field detection related applications. The very recent progress on TMR sensors and its industry prospect will be also introduced in this chapter. Spin transfer torque (STT) which transfers spin angular momentum to adjacent magnets to manipulate the spin direction, will be applied widely in the next generation non-volatile STT-MRAM. STT-MRAM has the potential to become a leading storage technology, thanks to its high performance, easy downscaling to below 10 nm nodes and low cost. Recent research of STT-MRAM is now focusing on improving the thermal stability, endurance and TMR value, as well as lowering critical switching current"--
ER  -