TY  - BOOK
AU  - Razeghi,Manijeh 
TI  - The MOCVD Challenge :  A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications
SN  - 9781138114937 (PB)
U1  - 621.381 
PY  - 2011///
CY  - Boca Raton
PB  - CRC Press
KW  - Electronic apparatus and appliances Materials
KW  - Metal organic chemical vapor deposition
N1  - Introduction to Semiconductor Compounds. Growth Technology. In situ Characterization during MOCVD. Ex situ Characterization Techniques. MOCVD Growth of GaAs Layers. Growth and Characterization of the GaInP–GaAs System. Optical Devices. GaAs-Based Lasers. GaAs-Based Heterojunction Electron Devices Grown by MOCVD. Optoelectronic Integrated Circuits (OEICs). InP–InP System: MOCVD Growth, Characterization and Applications. GaInAs–InP System: MOCVD Growth, Characterization and Applications. GaInAsP–InP System: MOCVD Growth, Characterization, and Applications. MOCVD Growth, Characterization and Applications of III–V Semiconductor Strained Heterostructures. MOCVD Growth of III–V Heterojunctions and Superlattices on Silicon Substrates and their Applications. Optoelectronic Devices Based on Quantum Structures. Appendices. Index
N2  - MOCVD is a widely used technique in research and industry. This book provides coverage of the MOCVD challenge. It presents a review of methods for producing ultra thin, accurately controlled epitaxial layers of semiconductor multilayers and microstructures deposited over a large range of substrates
ER  -